Title: From millibits to Terabits per second and beyond - Over 70 years of Innovation
Speaker: Dr. R.P. Jindal, Fellow, IEEE, Vanderziel Institute of Science and Technology, LLC, Princeton, New Jersey, USA
Date: Nov. 15th (Thursday), 2018
Time: 9:30am-10:30am (Lecture), 10:30am-11am (IEEE Discussion)
Location: ASB 10900, Presentation Studio, Applied Science Building, SFU, 8888 University Dr., Burnaby, BC
Everyone is welcome to attend.
REFRESHMENTS WILL BE PROVIDED.
Abstract:
The unfolding of the Information Age has led to a plethora of products and services enriching our lives and skyrocketing world economy. This advancement in telecommunications has been driven by both hardware and software. The circuit complexity, as portrayed by the number of transistors on the silicon chip, continues to double every 24 months as pointed out by Moore's law. On the other hand, the communication bandwidth had doubled every 18 months. This meteoric increase in bandwidth has been made possible by three key developments over the last 60 years. The first of these was the demonstration of the pointcontact bipolar transistor in 1947 by Bardeen, Brattain and Shockley which started the solidstate revolution. This was followed by the demonstration of the MOS FieldEffectTransistor by Kahng and Atalla in 1960. The second key contributor to this bandwidth explosion was the development of Information Theory as enunciated by Claude Shannon in 1948. Once in place, this provided a firm theoretical underpinning to understand the tradeoffs between signaltonoise ratio, bandwidth and errorfree transmission in the presence of noise. The third key development which ignited this fire was the invention of laser by Schawlow and Townes in 1958 with a working demonstration in 1960. Serious efforts to transform this understanding into highperformance lightwave systems started by the designing of integrated electronics using MOS technology around 1980. However, initial attempts at boosting receiver sensitivity and datarates was seriously hampered by a lack of understanding of the noise performance of the MOS device. Speaker's contributions in this area not only led to a deeper understanding of the noise behavior of MOS devices but also produced an order of magnitude improvement in their performance. This set the stage for MOS to become the technology of choice for lightwave and now lowcost wireless terminal applications. The ubiquitous nature of cell phones is a testimony to these key developments in the early 80's. In this talk, starting from smoke signals at millibits per second, we will trace these events from a historical perspective to see how these key technologies lead to the development of modern wireless and optical networks of terabit capacity with petabits looming in sight.
Video-conference:
The talk will also be accessible by video-conference on BlueJeans at the following link: https://bluejeans.com/528076971
Speaker(s): Dr. R.P. Jindal,
Agenda:
9:30am-10:30am (Lecture)
10:30am-11am (IEEE Discussion)
Location:
Room: ASB 10900
Bldg: Applied Science Building
Simon Fraser University
8888 University Dr.
Burnaby, British Columbia
V5A1S6